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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

Name: Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G
Brand: ONSEMI
Price: 1 USD

China Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G wholesale

Brand Name : ONSEMI

Model Number : MJ15025G

Certification : Original Factory Pack

Place of Origin : Mexico

MOQ : 5pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 260PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Feature : High Safe Operating Area (100% Tested) −2 A @ 80 V

DC Current : High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

Condition : • Pb−Free

Package : TO-204

Main Line : Ic,module,transistor,diodes,capacitor,resistor Etc

Factory Pack : 100pcs/Tray

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Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

PNP − MJ15023, MJ15025*

Silicon Power Transistors

The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.

Features

• High Safe Operating Area (100% Tested) −2 A @ 80 V

• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc

• Pb−Free Packages are Available*

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G MJ1502x = Device Code

x = 3 or 5

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

MEX = Country of Origin

ORDERING INFORMATION

Device	Package	Shipping
MJ15023	TO−204	100 Units / Tray
MJ15023G	TO−204 (Pb−Free)	100 Units / Tray
MJ15025	TO−204	100 Units / Tray
MJ15025G	TO−204 (Pb−Free)	100 Units / Tray

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

TYPICAL CHARACTERISTICS

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G

Product Tags:

low voltage power mosfet

hybrid inverter circuit

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